BAV19WS thru bav21ws vishay semiconductors formerly general semiconductor document number 88151 www.vishay.com 14-may-02 1 new product small-signal diodes maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit continuous reverse voltage BAV19WS 100 bav20ws v r 150 v bav21ws 200 repetitive peak reverse voltage BAV19WS 120 bav20ws v rrm 200 v bav21ws 250 forward dc current at t amb = 25 ci f 250 (1) ma rectified current (average) half wave rectification with resist. load i f(av) 200 (1) ma at t amb = 25 c and f 50hz repetitive peak forward current i frm 625 (1) ma at f 50hz, = 180 , t amb = 25 c surge forward current at t < 1s, t j = 25 ci fsm 1a power dissipation at t amb = 25 cp tot 200 (1) mw thermal resistance junction to ambient air r ja 650 (1) c/w junction temperature t j 150 (1) c storage temperature range t s 65 to +175 (1) c note: (1) valid provided that leads are kept at ambient temperature. .006 (0.15) max. .010 (0.25) min. .012 (0.3) .076 (1.95) .112 (2.85) .059 (1.5) .004 (0.1) max. .049 (1.25) max. cathode band to p v i ew .100 (2.55) .065 (1.65) .043 (1.1) features silicon epitaxial planar diodes for general purpose these diodes are also available in other case styles including: the do-35 case with the type designation bav19 - bav21, the minimelf case with the type designation bav100 - bav103, the sot-23 case with the type designation bas19 - bas21 and the sod-123 case with the type designation bav19w - bav21w sod-323 mechanical data case: sod-323 plastic case weight: approx. 0.004g marking BAV19WS = a8 code: bav20ws = a9 bav21ws = aa packaging codes/options: d5/10k per 13 reel (8mm tape), 30k/box d6/3k per 7 reel (8mm tape), 30k/box 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) mounting pad layout dimensions in inches and (millimeters)
BAV19WS thru bav21ws vishay semiconductors formerly general semiconductor www.vishay.com document number 88151 2 14-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit forward voltage v f i f = 100 ma 1.00 v i f = 200 ma 1.25 BAV19WS v r = 100v 100 na leakage current BAV19WS v r = 100v, t j = 100 c 15 a bav20ws i r v r = 150v 100 na bav20ws v r = 150v, t j = 100 c 15 a bav21ws v r = 200v 100 na bav21ws v r = 200v, t j = 100 c 15 a dynamic forward resistance r f i f = 10 ma 5 ? capacitance c tot v r = 0, f = 1 mhz 1.5 pf reverse recovery time t rr i f = 30 ma, i r = 30 ma 50 ns i rr = 3 ma, r l = 100 ? ratings and characteristic curves (t a = 25 c unless otherwise noted)
BAV19WS thru bav21ws vishay semiconductors formerly general semiconductor document number 88151 www.vishay.com 14-may-02 3 ? ratings and characteristic curves (t a = 25 c unless otherwise noted)
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